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 HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6515 Issued Date : 1993.03.15 Revised Date : 2002.01.15 Page No. : 1/4
HSD1609S
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD1609S is designed for low frequency high voltage amplifier applications, complementary pair with HSB1109S.
Absolute Maximum Ratings
TO-92
* Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 C Junction Temperature ...................................................................................... 150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ................................................................................ 900 mW * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage ....................................................................................... 160 V VCEO Collector to Emitter Voltage .................................................................................... 160 V VEBO Emitter to Base Voltage .............................................................................................. 5 V IC Collector Current........................................................................................................ 100 mA
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) VBE(on) *hFE1 *hFE2 fT Cob Min. 160 160 5 60 30 Typ. 140 3.8 Max. 10 2 1.5 320 Unit V V V uA V V Test Conditions IC=10uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=140V, IE=0 IC=30mA, IB=3mA VCE=5V, IC=10mA VCE=5V, IC=10mA VCE=5V, IC=1mA VCE=5V, IC=10mA IE=0, VCB=10V, f=1MHZ
*Pulse Test : Pulse Width 380us, Duty Cycle2%
MHz pF
Classification of hFE1
Rank Range B 60-120 C 100-200 D 160-320
HSD1609S
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
10000 1000
Spec. No. : HE6515 Issued Date : 1993.03.15 Revised Date : 2002.01.15 Page No. : 2/4
Saturation Voltage & Collector Current
125 C
75 C
o
hFE
25 C 100
o
Saturation Voltage (mV)
1000
o
100 125 C
o
75 C
o
10 hFE @ VCE=5V 1 0.1 1 10 100 1000
25 C VCE(sat) @ IC=10IB
o
10 0.1 1 10 100 1000
Collector Current IC (mA)
Collector Current IC (mA)
Saturation Voltage & Collector Current
10000 1000
ON Voltage & Collector Current
25 C
o
Saturation Voltage (mV)
ON Voltage (mV)
1000
125 C
o
75 C
o
100
125 C 75 C 25 C VCE(sat) @ IC=20IB
o o
o
VBE(ON) @ IC=5V
10 0.1 1 10 100 1000 10000
100 0.1 1 10 100 1000
Collector Current IC (mA)
Collector Current IC (mA)
Cutoff Frequency & Ic
1000 10
Capacitance & Reverse-Biased Voltage
Cutoff Frequency (MHz). .
fT 100
Capacitance (PF)
Cob
10 1 10 100 1000
1 0.1 1 10 100 1000
Collector Current (mA)
Reverse Biased Voltage (V)
HSD1609S
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6515 Issued Date : 1993.03.15 Revised Date : 2002.01.15 Page No. : 3/4
Safe Operating Area
10 PT=1ms
Power Derating
1000 900
Collector Current (mA)
1 PT=1s
Power Dissipation-PD(mW)
PT=100ms
800 700 600 500 400 300 200 100
0.1
0.01
0.001 1 10 100 1000
0 0 20 40 60 80 100
o
120
140
160
Forward Voltage (V)
Ambient Temperature-Ta( C)
HSD1609S
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A B
1 2 3
Spec. No. : HE6515 Issued Date : 1993.03.15 Revised Date : 2002.01.15 Page No. : 4/4
2
Marking:
HSMC Logo Part Number Date Code Rank Product Series
3
Laser Mark
HSMC Logo Product Series
C
D
Part Number
H I E F
G
Ink Mark
1
3-Lead TO-92 Plastic Package HSMC Package Code: A
Style: Pin 1.Emitter 2.Collector 3.Base
*: Typical
DIM A B C D E F
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
DIM G H I 1 2 3
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSD1609S
HSMC Product Specification


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